Controlled Cadmium Telluride Thin Films for Solar Cell Applications (Emerging Materials Systems for Solar Cell Applications). Quarterly Progress Report No. 3, October 9, 1979-January 8, 1980

摘要

The main emphasis during the third quarter of the program was on the improvement of the quality of sputtered films, their characterization and use in the fabrication of Schottky barrier type diodes and solar cell structures. Films prepared under different conditions and on different substrates were examined by SEM showing nodular growths under certain conditions. I-V, C-V and photovoltaic characteristics were measured on numerous samples based on n- and p-type films on Ni substrates having top metallization of either evaporated Au and Al. The n-type samples showed up to 200mV V/sub oc/ and small short-circuit currents. The characteristics observed are indicative of the presence of interfacial layer and surface states. Surface state's capacitance were measured on p-type samples metallized with Au. (ERA citation 05:021972)