Networked-Nanographite Wire Grown on SiO_2 Dielectric without Catalysts using Metal-Photoemission-assisted Plasma-enhanced CVD

摘要

We have developed nerworked-nanographite (NNG) wires as the first step for multilayer graphene interconnects. Photoemission-assisted Plasma-enhanced CVD has been proposed as a growth method on dielectrics without catalysts. The activation energy of carrier conduction for NNG wire was almost the same as that of multilayer graphene exfoliated from highly oriented pyrolytic graphite (HOPG). This means that NNG consists of domains of multilayer graphene. Although we need to improve growth conditions, NNG is one of the candidates for future interconnect materials.