A highly reliable nano-dustering silica with low dielectric constant (k<23) and high elastic modulus (E=10 GPa) for copper damascene process

摘要

A highly reliable nano-clustering silica (NCS) with low dielectric constant (k<2.3) and high elastic modulus (E=10Gpa) for copper damascene process has been developed by controlling the size and distribution of pores in the NCS precursor. Using this material in a process compatible with the 90 nm technology node, we successfully demonstrated Cu wiring in NCS dielectrics.