首页> 外文会议>Advanced workshop on silicon recombination lifetime characterization methods >COMPARATIVE ANALYSIS OF PHOTOCONDUCTANCE DECAY AND SURFACE PHOTO VOLTAGE TECHNIQUES: THEORETICAL PERSPECTIVE AND EXPERIMENTAL EVIDENCE
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COMPARATIVE ANALYSIS OF PHOTOCONDUCTANCE DECAY AND SURFACE PHOTO VOLTAGE TECHNIQUES: THEORETICAL PERSPECTIVE AND EXPERIMENTAL EVIDENCE

机译:光电导衰减与表面光电技术的比较分析:理论透视与实验证据

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摘要

Theoretical basis of Photoconductance Decay and Surface Photovoltage Techniques is presented. Impact of typical measurement set-ups and sample preparation procedures on the differences observed in experimental results which include diffusion length, recombination lifetime, and bulk iron concentration is emphasized. Measurement accuracy and evaluation repeatability for both techniques is simulated. Relevant experimental evidence is presented based on a variety of samples with different intentionally introduced metal contamination, oxygen levels, and surface electrical properties.
机译:提出了光电导衰减和表面光电电压技术的理论基础。强调,典型测量组和样品制备程序对包括扩散长度,重组寿命和散装铁浓度的实验结果中观察到的差异的影响。模拟了两种技术的测量精度和评估重复性。基于各种样品的相关实验证据提出,具有不同的有意引入的金属污染,氧气水平和表面电性能。

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