INFLUENCE OF IRON AND COPPER ON MINORITY CARRIER RECOMBINATION LIFETIME IN SILICON

摘要

A contamination experiment was carried out to prove the possibility of a quantitative determination of the Fe-concentration in the high injection level region for p-type silicon. Calculation factors for two formulas were obtained, one assuming only FeB as lifetime-killer and another general one. A comparison between DLTS-, SPV-and μ-PCD-results showed a very good correlation of all instruments. Copper was proved to have also a strong influence on lifetime measurement, especially in n-type Silicon. Cu is suspected to affect the efficiency of Oxide passivation. Nitrogen also seemed to have a considerable influence at least in connection with a Cu contamination.