The VIISta 810 300 mm medium current ion implanter

摘要

The transition to 300 mm diameter substrates with device line widths below 180 nm poses several challenges to ion implanter manufacturers. In particular, the growing requirements for high energy implantation for well isolation and anti-latch up, the need for lower and lower energies for all implants associated with the channel, as well as the need for higher throughputs, all demand a more versatile medium current implanter than presently exists. This paper provides an overview of Varian's new 300 mm medium current ion implanter The aspects of the design which are targeted on meeting the requirements for improved high energy, low energy, particle and metals performance will be discussed along with those that give the machine a much higher throughput than existing tools.