METHOD FOR HIGH ENERGY IMPLANTATION USING A LOW OR MEDIUM CURRENT IMPLANTER, AND DEVICES THEREFOR

摘要

The implantation energy of a medium current ionic implanter may be increased by placing in the implanter a microwave generator with a travelling-wave tube generating an electromagnetic field with a frequency of at least 6 GHz; replacing the initial ion source of the implanter with a multiple charged ion source (3) having electronic cyclotron resonance and comprising a plasma cavity acting as a waveguide (21) with a characteristic dimension (D), in the cross-sectional plane of the cavity, that is similar to the wavelength of the electromagnetic field; electromagnetically coupling the microwave generator (60) to the plasma cavity (21) of the multiple charged ion source; delivering a complex gaseous medium compatible with the desired ion beam into the plasma cavity; adjusting the gaseous medium delivery rate to maintain within the plasma cavity a residual vacuum below a pressure threshold suitable for generating multiple charged ions; and adjusting the focus of the ion beam removed from the plasma cavity, at the focal point of the analysing magnet (7) of the implanter.