Formation of /spl beta/-SiC thin layers by implantation of carbon ions into silicon using MEVVA ion source

摘要

Silicon carbide (SiC) has long been recognized as a semiconductor material with outstanding physical and electronic properties compared to silicon such as a larger band gap, a higher thermal conductivity, a higher break-down field and a higher stability in reactive environment. These properties make SiC interesting for the fabrication of electronic devices which can operate at significantly elevated temperatures, higher powers, higher frequencies and reactive environment. In this work, buried thin layers of SiC were formed by implantation of carbon ions into silicon wafers in the energy range of 20-60 keV and the carbon-ion dose of 1/spl times/10/sup 17/ - 5/spl times/10/sup 17/ ions/cm/sup 2/. The implantation of carbon ions was performed using MEVVA ion source. The depth profiles of the implanted carbon concentration were measured using Rutherford backscattering spectroscopy and X-ray photoelectron spectroscopy which showed the formation of chemical bonding of implanted carbon with silicon even for the as-implanted samples. Crystallization of /spl beta/-SiC phase followed by the recrystallization of the silicon wafer in the damaged region was observed from the samples annealed at 1000/spl deg/C for 4 hours in an Ar atmosphere.