Formation and characterization of 3C-SIC by carbon-ion implantation into silicon with a mevva ion source

摘要

Crystalline cubic silicon carbide (3C-SiC) surface layers have been prepared by carbon-ion implantation into silicon (100) using a MEVVA ion source and subsequent annealing at 1250 degrees C for 2 h. The obtained films have been characterized by SEM, XRD, and micro-Raman analysis. The effect of carbon-ion dose on the surface morphology of the ion-implanted samples has been investigated. Rectangular patterns are observed on the surfaces of carbon-ion-implanted silicon substrates. It is found that the amount of rectangular patterns increases with ion dose, suggesting the dependence of surface morphology on ion dose. The formation of rectangular patterns has been elucidated in this paper.