^4fEvaluation of DAVED - Microgyros Realized with a new 50 μ SOI - Based Technology

摘要

^7fThis paper reports on a new low cost, SOI-based technology, developed at HSG-IMIT, with a thickness of the device layer of about 50 μm and a low pressure encapsulation. The necessity of the development of the advanced technology process is pointed out by the example of the micro-machined gyroscopes DAVED-LL. The individual steps of the process flow and results characterizing the technology are described and discussed in detail. First measurement results of gyroscopes realized with the advanced technology are presented and a comparison with the technical data of DAVED-LL sensors with a device layer thickness of 15 μm is accomplished.