A unique approach to MOCVD of complex oxides enables deposition of a number of materials of technological importance through the use of liquid delivery of metalorganic precursors. Methodologies for control of composition and exploration of process space are compared for two film systems, one in a relatively mature state of development ((BVa,Sr)TiO_3), the other in an early state of development (Ni-ferrite). In both cases, composition was controled by mixing metalorganic precursors dissolved in solvents using a liquid delivery system. Films with excellent crystalline quality were deposited in both cases. Polycrystalline BST films displayed properties suitable for DRAM applications; sharge storage densities > 80 fF/ um ~2 and leakage current density < 10~-8 A/cm~2 for films as thin as 15 nm. Growth mechanisms and rates were determined for the single component oxides of the ferrite films. Epitaxial NiFe_2O_4 films were deposited on MgO signle crystal substrates at 650 deg C; x-ray rocking curves yielded FWHM values of 0.046, commensurate with the substrate.
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