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Improving Temperature Accuracy for Rapid Thermal Processing at NIST

机译:提高NIST快速热处理的温度精度

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At the National Institute of Standards and Technology (NIST), we have been developing methods to improve the temperature measurement accuracy of semiconductor materials undergoing high-temperature thermal processing. Our goal is for accuracies of 2°C in the range from 700°C to 1000°C. We have demonstrated new methods for calibrating lightpipe radiation thermometers (LPRTs) against blackbodies with an uncertainty of 0.2°C (k=1). A more challenging issue is how to achieve accurate traceable temperature measurements in process environments. We have studied two approaches: in-situ calibration of the LPRT against a thin-film thermocouple test wafer; and making model-based corrections to spectral radiance temperatures using an LPRT calibrated against a blackbody. We have achieved uncertainties of 2.3°C and 3.5°C for the two methods, respectively. While the work specifically addresses a semiconductor application, the approaches have general applicability for achieving reliable, traceable temperature measurements using LPRTs in other material processing and manufacturing environments.
机译:在国家标准与技术研究所(NIST),我们一直在开发方法以提高经历高温热处理的半导体材料的温度测量精度。我们的目标是2°C的精度,范围为700°C至1000°C。我们已经展示了校准灯具辐射温度计(LPRTS)对黑色阳离子的新方法,其不确定度为0.2°C(k = 1)。更具挑战性的问题是如何在过程环境中实现准确的可追踪温度测量。我们研究了两种方法:对薄膜热电偶测试晶片的LPRT原位校准;并使基于模型的校正在使用抵抗黑体的液体校准的LPRT校准的光谱辐射温度。我们分别为两种方法达到了2.3°C和3.5°C的不确定性。虽然该工作专门地解决了半导体应用,但该方法具有一般适用性,可以使用其他材料加工和制造环境中的LPRT来实现可靠,可追踪的温度测量。

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