Investigation of the temperature transients of high power laser arrays with different thermal architecture

摘要

We investigated the transient thermal behavior of laser diodes mounted on different heat sinks (Cu, Si, diamond). Time dependent two- and three-dimensional FEM simulations were employed to calculate the temperature distribution in such laserarrays. The results were compared with temperature distributions derived from spectral measurements. This was done for pulse durations from 10 ns to 100 ms and for continuos wave operation. We found three time intervals with a qualitatively differentdevice heating behavior. The FEM model takes into account the spatial distribution of the loss mechanisms in the semiconductor structure. The contribution of the different loss processes to the overall heat generation was calculated on thc basis of a rate equation model.