The shift of Raman spectrum of the silicon single crystal which applied uniaxial tension are measured by the Raman micro spectroscopy to evaluate the Raman shift v.5. stress relation.The polarized incident and scattered light are adopted to determine the stress conditions using the proposed theory about the relations between the stress components and the shift of Raman spectrum. The results of calculation are about 2～3 times largerthan the experimental values. The difference between these values is somewhat large, however, it is within one order in magnitude.
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