P-9: The Effect of PECVD μc-Si Buffer Layer in Laser-Recrystallized Poly-Si TFTs

摘要

For inverted staggered low-temperature poly-Si thin film transistor using fully PECVD, a μc-Si film added between the film of a-Si and gate insulator as a buffer layer has been developed to enlarge the process window of energy density of excimer laser from 216 to 264 mJ/cm~2 and enhance the performance of the thin film transistor. The field effect mobility of 80 cm~2/vsec can be achieved for the sample after excimer laser annealing with a energy density of 264 mJ/cm~2.