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Industrial microsystems on top of CMOS design and process

机译:CMOS设计和过程顶部的工业微系统

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We propose a design and technology methodology and CAD tools for a microsystems fabrication based on the 1.0μm CMOS from ATMEL-E52. In order to profit from vendor cell libraries, design kits have to be enhanced to deal with the new conception environment Main contributions are, sensor dependent technology file, device modeling and automatic generation for different ranges, and adaptation of semi-custom tools (simulation environment and P&R) for complete microsystems design. A library of dedicated sensor cells is being designed using Cadence DFWII and the foundry design kit These sensors are fabricated with the standard CMOS process plus some post-processing steps. Three levels of post-processing are considered: (1) pH-ISFET sensors fabricated using standard CMOS, (2) gas flow and radiation sensors based on thermopiles using simple post-processing (maskless anisotropic etching), (3) piezoresistive pressure and acceleration sensors with complete post-processing, (double-sided photolithography and silicon anisotropic etching). The post-processing is compatible with the foundry CMOS process. Our technology has been developed up to the point of maximum simplification that results in the use of only one additional mask for back-side etching (membrane mask). Passivation layer together with oxide windows are used for front-side etching with excellent results.
机译:我们提出了一个设计和技术方法和CAD工具基于爱特梅尔-E52的1.0μm的CMOS微一制造。为了从供应商的单元库获利,设计套件必须增强应对新的概念环境的主要贡献是,传感器相关技术文件,适用于不同范围的器件建模和自动生成,和适应的半定制工具(仿真环境和P&R)为完整的微系统的设计。专用的传感器单元库正在使用Cadence DFWII设计和铸造设计试剂盒,这些传感器与标准CMOS工艺再加上一些后处理步骤制造。后处理的三个水平被认为:(1)pH值的ISFET传感器使用标准CMOS制造,(2)气体流量和辐射传感器基于利用简单的后处理热电堆(无掩模各向异性蚀刻),(3)的压阻式压力和加速度与完整的后处理的传感器,(双面光刻和硅各向异性蚀刻)。后处理与铸造CMOS过程兼容。我们的技术已经发展到的结果中只使用一个额外的面具用于背面蚀刻(膜面膜)最大程度的简化点。钝化层与氧化窗一起用于前侧蚀刻,结果优异。

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