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INFRARED REMOTE CONTROL RECEIVER HAVING SEMICONDUCTOR SIGNAL PROCESSING DEVICE DESIGNED WITH ONLY CMOS PROCESS
INFRARED REMOTE CONTROL RECEIVER HAVING SEMICONDUCTOR SIGNAL PROCESSING DEVICE DESIGNED WITH ONLY CMOS PROCESS
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机译:具有仅采用CMOS工艺设计的半导体信号处理装置的红外遥控接收器
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摘要
PURPOSE: An infrared remote controller receiver having a semiconductor signal processing device designed by only a CMOS(Complementary Metal Oxide Semiconductor) process is provided to have an excellent noise characteristic by composing the semiconductor signal processing device designed by only the CMOS process. CONSTITUTION: An amplifying circuit(100) receives an output signal of a photo diode(20), and amplifies the received signal. A variable gain amplifying circuit(200) receives the output of the amplifying circuit(100), and differently amplifies gains of an original signal and a noise signal. A filter(300) receives a signal from the variable gain amplifying circuit(200), and passes only a carrier frequency component. An envelop signal detecting circuit(400) receives an output signal of the filter(300), and extracts an envelop signal. A hysteresis comparator(600) receives outputs of the envelop signal detecting circuit(400), compares the received outputs, and generates a pulse signal corresponding to a received remote control signal. An AGC(Automatic Gain Control) circuit(500) receives the output of the envelop signal detecting circuit(400), classifies the original signal and the noise signal, and allows the variable gain amplifying circuit(200) to adjust the gains of the original signal and the noise signal.
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