We propose a design and technology methodology and CAD tools for a microsystems fabrication based on the 1.0 $mu@m CMOS from ATMEL-ES2. In order to profit from vendor cell libraries, design kits have to be enhanced to deal with the new conception environment. Main contributions are, sensor dependent technology file, device modeling and automatic generation for different ranges, and adaptation of semi- custom tools (simulation environment and P and R) for complete microsystems design. A library of dedicated sensor cells is being designed using Cadence DFWII and the foundry design kit. These sensors are fabricated with the standard CMOS process plus some post-processing steps. Three levels of post-processing are considered: 1) pH-ISFET sensors fabricated using standard CMOS, 2) gas flow and radiation sensors based on thermopiles using simple post-processing. The post-processing is compatible with the foundry CMOS process. Our technology has been developed up tot he point of maximum simplification that results in the use of only one additional mask for back-side etching. Passivation layer together with oxide windows are used for front-side etching with excellent results.
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机译:我们提出了一种基于Atmel-ES2的1.0 $ MU @ M CMOS的MicroSystems制造的设计和技术方法和CAD工具。为了从供应商单元库中获利,必须加强设计套件来处理新的概念环境。主要贡献是,传感器依赖性技术文件,设备建模和自动生成不同范围,以及用于完整微系统设计的半自定义工具(仿真环境和P和R)的调整。使用Cadence DFWII和铸造设计套件设计专用传感器单元库。这些传感器采用标准CMOS工艺加上一些后处理步骤制造。三级后处理被认为是:1)使用标准CMOS,2)气流和辐射传感器制造的pH-ISFET传感器,使用简单的后处理基于热处理。后处理与铸造CMOS过程兼容。我们的技术已经开发出来的最大简化点,导致只使用一个额外的掩模进行后侧蚀刻。钝化层与氧化窗一起用于前侧蚀刻,结果优异。
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