Micromachined VO2-based uncooled IR bolometric detector arrays with integrated CMOS readout electronics

摘要

Uncooled IR bolometric detectors fabricated using surface silicon micromachining are presented. The detector fabrication process employs a polyamide sacrificial layer, and a VO$-2$/ thermistor layer exhibiting a thermal coefficient of resistance on the order of $MIN@3 percent/degrees C. Detector sizes are 100 $mu@m $MUL 100 $mu@m and 50 $mu@m $MUL 50 $mu@m, and 64 $MUL 64 and 128 $MUL 128 pixel arrays are fabricate. The detectors exhibit responsivities of up to 15 000 VW$+$MIN@1$/, normalized detectivities typically exceeding 10$+8$/ cm Hz$+1/2$/W$+$MIN@1$/, and response times below 20 ms. Three integrated readout circuit designs for 64 $MUL 64 and 128 $MUL 128 pixel detector arrays, fabricated using a standard 1.5 $mu@m CMOS process,a re described. These circuits include several test and detector nonuniformity correction features and can operate in either self scanning mode at a rate of 30 frames per second, or in the random access mode in which column and row addresses are input directly.