Electron emission was obtained from discontinuous diamond thin films containing numerous carbon inclusions (diamond- carbon films) which were deposited on Mo using microwave chemical vapor deposition techniques. The films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscopy. The square resistance of the films varied from 3 K approximately ega to 20 M approximately ega@, and the maximum emission current of 1.4 mA was obtained from a broad emitting area of 15 $MUL 5 mm$+2$/. The Fowler-Nordheim (FN) behavior of some samples was piecewise linear, which was similar to the typical FN curves of p-type silicon. A simple field emission device was demonstrated using the diamond-carbon cold cathode. The lower turn-on electrical field and higher current density was obtained from amorphous carbon-polyimide films deposited on silicon substrate by pulse laser deposition for the first time. The locations of electron emission sites were observed using transparent conducting anode technique.
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