首页> 外文会议>Conference on semiconductor lasers >Controllable enhancement of spontaneous emission in perpendicular direction by single quantum well embedded in planar microcavities
【24h】

Controllable enhancement of spontaneous emission in perpendicular direction by single quantum well embedded in planar microcavities

机译:单量子阱嵌入平面微覆盖物的垂直方向上的自发发射的可控增强

获取原文

摘要

Based on the cavity quantum electrodynamics, the controllable enhancement of spontaneous emission in perpendicular direction by single quantum well embedded in a planar micro-cavity has been studied. The spontaneous emission spectra are obtained for different mirror reflectivity and cavity length when the carrier density is fixed. The results show that the spontaneous emission intensity can be enhanced by increasing the mirror reflectivity when radiation wavelength is about two times of the cavity length. The spectra can be changed by the micro- cavity structure and the quantum well parameters.
机译:基于空腔量子电动动力学,研究了通过嵌入平面微腔中的单量子孔垂直方向上的自发发射的可控增强。当载流子密度固定时,可以获得不同镜子反射率和腔长的自发发射光谱。结果表明,当辐射波长约为腔长的两倍时,通过增加镜子反射率可以提高自发发光强度。光谱可以由微腔结构和量子阱参数改变。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号