Fabrication of Layer-by-Layer Assembled Nonvolatile Memory Devices Based on Binary Transition Metal Oxides

摘要

Nonvolatile memory devices such as charge-trap flash, phase change, ferroelectric and resistive switching memory (RSM) have recently attracted much attention due to the widespread use of mobile electronics.'" In particular, RSM devices based on binary transition metal oxides (TMO), which shows the excellent device performance and simple device structure, have been recognized as a notable candidate of the next generation of nonvolatile memory devices since the resistance switching of oxide insulators have been first introduced in 1960. However, these binary TMO-based devices prepared by conventional vacuum deposition have much difficulty in fabricating the large-area devices and lowering the production cost and improving the process time efficiency. As an alternative, a variety of polymer-based materials can be used as an active layer of RSM devices. Although these materials can not be compatible with inorganic oxide materials in view of device performance and electrical stability, the deposition of active layer through simple spin-coating has an important advantage in fabricating RSM devices with low-cost, simplified manufacturing and large area.