Cobalt-Containing Polymers as Materials for Fabrication of Next Generation Integrated Circuits Using Extreme Ultraviolet Lithography

摘要

According to the International Technology Roadmap for Semiconductors, the miniaturization trend is expected to continue with the production of sub-25 nm generations of semiconductor devices in the near future. In order to achieve this goal, new approaches and materials are needed. As part of the ongoing research to find solutions, metal-containing polymers are for the first time considered. Although the application of the metal-containing polymers as photoresists is not excluded, the presented work describes their utility as underlayers or patteming assist layers (PALs) in conjunction with an ESCAP polymer for EUV lithography