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Characterization Of Titanium Nitride Films Prepared By DC Reactive Magnetron Sputtering At Different Deposition Time

机译:不同沉积时间DC反应磁控溅射制备的氮化钛膜的表征

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Titanium nitride (TiN) films were grown on Si(111) and 95W18Cr4V high-speed steel substrates using DC reactive magnetron sputtering technique with different deposition time. The changes in crystal growth orientation of the TiN films were measured by X-ray diffraction (XRD). The surface & cross-sectional morphologies of TiN films were analyzed using field emission scanning electron microscopy (FESEM), The hardness and adhesive property of TiN films were evaluated as well. It is found that the increase of the film thickness favors the formation of the {111} preferred orientation of TiN films. When the {111} preferred orientation is presented, TiN films exhibit a kind of surface morphology of triangular pyramid with right angles. With the increase of the film thickness, the columnar grains continuously grow lengthwise and breadthwise. The size of grains influences the hardness of TiN films more greatly. The adhesive property of the film/substrate interface decreased with increasing film thickness.
机译:使用具有不同沉积时间的DC反应磁控溅射技术在Si(111)和95w18Cr4V高速钢基板上生长氮化钛(锡)膜。通过X射线衍射(XRD)测量锡膜的晶体生长取向的变化。使用现场发射扫描电子显微镜(FeSEM)分析锡膜的表面和横截面形态,也评价锡膜的硬度和粘合性。结果发现,薄膜厚度的增加有利于形成锡膜的{111}优选取向。当提出{111}优选的方向时,锡膜表现出一种具有直角的三角金字塔的一种表面形态。随着膜厚度的增加,柱状晶粒纵向纵向生长和不足。谷物的大小更大地影响锡膜的硬度。薄膜/衬底界面的粘合性能随着薄膜厚度的增加而降低。

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