The steady state temperature profiles of U- and I-shaped electrothermal microactuators are analytically derived. The temperature profiles could be used to evaluate the performance sensitivity of the microactuator due to various parameter changes. In this work, the analysis assumes an unpackaged silicon microactuator with an air gap between the actuator and substrate and the profiles are evaluated for various input voltage amplitudes. It was found that at low voltage inputs the temperature profile is exponential in nature with the failure being due to thermo-structural stresses and/or structure melting. At voltages larger than a critical value, a combined sinusoidal and exponential temperature profile is observed with the failure being strongly due to structural melting as well. However, higher voltage excitation causes a fully distributed sinusoidal temperature profile. In this mode, failures occur at different locations and due to high localized thermal stresses causing the temperature to exceed the material melting point. The behavior of U- and I-shaped microactuators based on silicon on insulator (SOI) fabrication and femtosecond laser micromachining was experimentally examined with the results corroborating the conclusions drawn from the analysis.
展开▼
