QUALITY FACTOR ENHANCEMENT OF IN SITU ANNEALLNG CANTLLEVERS

摘要

Ultrathin cantilevers with force resolution in the aNHz range have been used in a variety of mictosoopy experiments to detect extremely small forces, Such cantilevers face a fun-damental limit to their ability to detect small forces thermo-mechanical noise,For ultrathin cantilever structures,improve-ment of the Q is vital to the improvement of force resolution.Heat treatments to remove surface contaminants have demon-strated improvements in the room temperature Q .In order to utilize this treatment in actual experiments,in situ self-annealing single-crystal silicon cantilevers have been fabricated.With 100mW of applied power,0.25μm thick self-annealing cantilevers have demonstrated a three-fold improvement in their room temperature Q.By integrating the thermal noise spec-trum of the cantilevers while they are being annealed,it is de-duced that the cantilever is heated to 1000±100K.