Iron silicide formation by excimer laser pulses

摘要

We report the synthesis of iron silicide layers by multipulse excimer (XeCl) laser irradiation of Si/Fe bilayers (50 and 90 nm thick, respectively) deposited on single crystal silicon wafers. A mixture of iron silicide phases is usually formed after a few hundreds of laser pulses at the fluence of 0.5 J/cm$+2$/ with a repetition rate of 50 Hz. After thousand pulses the high- temperature stable $alpha@-FeSi$-2$/ silicide forms.