Photo-CVD of dielectric materials by pseudo-continuous excimer sources

摘要

We report the use of vacuum ultraviolet (VUV) light generated from a new type of excimer lamp to initiate the deposition of dielectric thin films in a photo-chemical vapor deposition process. Compared with other lamps, these pseudo-continuous light sources can provide high photon fluxes (more than a few watts) over large areas. The photo-deposited film properties were determined using the usual techniques of ellipsometry, FTIR spectroscopy, and electrical measurements. Good film quality was obtained making this technique highly attractive. A layered combination of silicon oxide, silicon nitride, and silicon oxynitride can be produced in the same reactor at temperatures below 300$DGR@C. The technique also offers very good control of the stoichiometry in the case of Silicon oxynitride film deposition, and therefore provides interesting perspectives for optical applications.