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Diode laser-induced pyrolytic decomposition of spin-coated organometallic thin films

机译:二极管激光诱导的旋涂有机金属薄膜的热解分解

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We have developed a compact and reliable diode laser-based system for the direct writing of metals from thin organometallic films deposited onto polyimide and SiO$-2$/ substrates. This system uses an AlGaAs diode laser array, emitting at $lambda $EQ 796 nm with a maximum power of 1 W. A commercially available gold ink was spin-coated onto the substrate to form the precursor film. Direct writing was achieved by focusing the laser beam onto the film and by moving the substrate at speeds ranging from 10 to 15,000 $mu@m/s. We deposited gold lines 2 - 12 $mu@m wide onto SiO$-2$/ and 13 - 17 $mu@m wide onto polyimide; a thickness of 0.1 $mu@m was evaluated by profilometry. Conductive deposits with resistivities of 30 $mu approximately ega$DOT@cm were obtained on polyimide with good reproducibility at high writing speeds. The selective electroless plating of copper was achieved onto the gold lines deposited on SiO$-2$/. However, prior annealing was necessary to obtain reproducible plating.
机译:我们开发了一种基于紧凑且可靠的二极管激光系统,用于从沉积在聚酰亚胺的薄有机金属薄膜和SiO $ -2 $ /基板上的金属直接写入金属。该系统使用AlGaAs二极管激光阵列,在$ Lambda $ EQ 796nm发射,最大功率为1W。将市售的金墨水旋涂到基板上以形成前体膜。通过将激光束聚焦到薄膜上并通过以10至15,000 $ MU @ M / s的速度移动基板来实现直接写入。我们沉积金线2 - 12 $ mu @ m宽到Sio $ -2 $ /和13 - 17 $ mu @ m宽@ m m宽;通过轮廓测量评估0.1 $ MU @ M的厚度。在聚酰亚胺上获得具有30 $ 30 $ MU的电阻性的导电沉积物,在高写速度下具有良好的再现性。铜的选择性化学镀层达到沉积在SiO $ -2 $ /上的金线上。然而,先前退火是必要的,以获得可重复的电镀。

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