Molecular organic semiconductors electronic structure and properties of photopolymers

摘要

The complex investigations of optical and electronic properties of organic molecular semiconductors are described. It is shown that the process of photogeneration in these compounds passes through the initial formation stage of molecular excitons which can migrate through until an annihilation, capture, or an interaction with traps occurs. The diffusion length of exciton migration is determined, the self-capture processes of excitons, charge carriers, and also processes of carriers captured by deep traps are investigated. The nature of anti-Stocks luminescence, conditioned by annihilation processes at K $GRT 1 cm$+$MIN@1$/ and double-photon absorption at K $LS 1 cm$+$MIN@1$/, is determined. Electron structure is studied by means of the photovoltaic current spectroscopy method. The double-photon processes with total and half energy levels common for all substances investigated are found. On the basis of IR-absorption spectra similarity and due to the existence of similar non-interferential enlightenment in the metal-benzene- containing molecular semiconductor junctions Fermi-level energies are predicted for these semiconductors.