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Implementation of a polarization modulation technique in a photoluminescence and photoluminescence excitation measurement setup

机译:光致发光和光致发光激励测量设置中的偏振调制技术的实现

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We describe a polarization modulation technique employing a photoelastic modulator and present its implementation in the experimental setup of a photoluminescence (PL) and a photoluminescence excitation (PLE) experiment. In the PL experiment the technique is used to analyze the emitted light with respect to its polarization, whereas for the PLE the polarization of the exciting light is modulated, probing the polarization dependence of the absorption of the light. Since the modulation of the light is restricted to the polarization, the polarization dependence can be measured simultaneously with the PL or PLE intensity. The versatility and the sensitivity of the technique is exemplified by presenting results of polarized PL and PLE obtained on quantum wire samples grown on the vicinal (100) surface of GaAs by molecular beam epitaxy (MBE) that show a considerable anisotropy in the linear polarization for both the PL and PLE at low temperatures.
机译:我们描述了一种采用光弹性调节器的偏振调制技术,并在光致发光(PL)的实验设置中呈现其实现和光致发光激发(PLE)实验。在PL实验中,该技术用于分析相对于其极化的发射光,而对于PLE被调节励磁光的偏振,探测光吸收的偏振依赖性。由于光的调制被限制为极化,因此可以与PL或PLE强度同时测量偏振依赖性。通过通过分子束外延(MBE)在GaAs上生长的量子线样品上获得的偏振PL和PLE的偏振PL和PLE的结果来举例说明了该技术的敏感性和灵敏度。在线偏振中显示出相当大的各向异性的量子束外延(MBE)。 PL和低温下的PLE。

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