FE Based Thermal Analysis of Void Effect in IGBT Mechanical Module

摘要

In this paper, a reasonable model under the thermal void effect of the Insulate Gate Bipolar Transistor is been built. Finite element analysis (FE) is introduced to analyze thermal characteristics of the model. The results indicate that the heat distribution of IGBT is determined of voids with different sizes, positions and the intensity. Besides, the synergy of void effect and heat coupling effect would significantly increase the temperature of the chip.