Simulation of the Influence of High-Voltage Pulsed Potential Supplied During the Deposition on the Structure and Properties of the Vacuum-Arc Nitride Coatings

摘要

TiN films have been deposited on stainless steel plates using plasma based the ion implantation & deposition (PBII&D) with a negative pulse voltage from 850 to 2000 V. According to the results of X-ray structural analysis, the formation of titanium nitride with a cubic crystal lattice of the NaCl structural type is seen to occur. Computer simulation allows determining the depth of the layer that is exposed to the radiation, taking into account all the cascade damage. The depth of the layer varies from 3 to 4.4 nm with an increase of negative impulse potential (Uip) from 850 to 2000 V, respectively. A transition of the texture from to is present in TiN coatings with an increase of Uip. In the case of a pulse duration of 10 and 16 μs in the entire range of Uip used, the following dependences are observed: with the increasing Uip, the deformation of the crystallite lattice decreases with the axis of the texture and increases with the corresponding deformation in the crystallite with the axis of the texture.