Next-generation plating products that are developed for flip-chip and 3-D packaging applications must be able to meet an ever more challenging set of performance requirements before next-generation devices can be realized. Device architectures and patterns are not only decreasing in size, but they are also becoming more complex in die design and layout. Additionally, the drive to increase throughput by increasing the electrodeposition rates has increased the performance metrics to which plating products must be able to achieve. Because of this, next-generation products such as copper pillar, nickel and SnAg as a lead-free solder are required that are able to electroplate high quality deposits which will allow for highly-reliable, efficient and cost-effective microelectronic device fabrication processes. Furthermore, as the industry moves from traditional C4 SnAg bumping processes to copper pillar with SnAg caps with decreasing feature sizes (Figure 1), a premium is placed on intermetallic integration and compatibility with minimal pre- and post-reflow defects.
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