Improved Magnetism in Mn-doped ZnO Thin Films by Inserting ZnO Layer

机译：通过插入ZnO层改进Mn掺杂ZnO薄膜中的磁性

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Compared to Ti/Mn doped ZnO/Pt (Ti/MZO/Pt) device,the Ti/MZO/ZnO/Pt device exhibits more excellent resistive switching (RS) performances and larger magnetic variation behaviors.The RS behavior is attributed to formation and rupture of oxygen vacancy (Vo) based conductive filaments (CFs),and magnetic variation was demonstrated by bound magnetic pole (BMP) model.Here ZnO buffer layer contribute to improve the RS and magnetism.

机译：与Ti / MN掺杂ZnO / Pt（TI / MZO / PT）器件相比，Ti / MZO / ZnO / PT器件表现出更优异的电阻切换（RS）性能和较大的磁变异行为。RS行为归因于形成和形成基于氧气空位（VO）导电细丝（CFS）的破裂和磁性变化通过结合的磁极（BMP）模型来证明。该ZnO缓冲层有助于改善RS和磁性。

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《Annual International Conference on Materials Science and Engineering》|2019年|524 p.|共5页
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Huifang Yang; Zhenhua Li; Lingzhi Tang;
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中图分类工程材料学;
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1. Evidence for carrier-mediated magnetism in Mn-doped ZnO thin films [J] . Devajyoti Mukherjee, Tara Dhakal, Hariharan Srikanth, Physical review . 2010,第20期

机译：Mn掺杂ZnO薄膜中载流子介导磁性的证据
2. Magnetism and energetics of Mn-Doped ZnO (1010) thin films [J] . Q. Wang, Q. Sun, B. K. Rao, Physical review. B, Condensed Matter And Materals Physics . 2004,第23期

机译：Mn掺杂ZnO（1010）薄膜的磁性和高能学
3. Origin of Room Temperature Magnetism in Thin (ZnO)_(1-x)(MnO_2)_x Films and ZnO/MnO_2 Multilayers [J] . E. LOPEZ-PONCE, A. WENNBERG, M. S. MARTIN-GONZALEZ, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第10A期

机译：（ZnO）_（1-x）（MnO_2）_x薄膜和ZnO / MnO_2多层薄膜中室温磁场的起源
4. Improved Magnetism in Mn-doped ZnO Thin Films by Inserting ZnO Layer [C] . Huifang Yang, Zhenhua Li, Lingzhi Tang Annual International Conference on Materials Science and Engineering . 2019

机译：通过插入ZnO层改进Mn掺杂ZnO薄膜中的磁性
5. Analysis of the Temperature Dependent Band-edge Distribution as a Function of Annealing in ZnO and ZnO-Based Thin Film Alloys [D] . Canul, Amrah. 2020

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Improved Magnetism in Mn-doped ZnO Thin Films by Inserting ZnO Layer

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