Improvement Study of Mitsui SOC Materials for Multilayer Lithography Process

摘要

In this report, we will describe the progress of our new SOC material development for the underlayer. In the advancedpatterning technology such as EUV lithography, the etching resistance and the adhesive property with a middle layer willbe key requirements as well as the planarization. We designed new polymers for SOC material that were improved theetching resistance toward next generation patterning technology on the basis of Ohnishi parameter as a guideline of thepolymer design. The etching resistance of our newly developed polymers were about 1.7 times and 1.5 times stronger thanthe polymer A we reported previously and the PHS or novolac. The adhesive property was evaluated by measuring watercontact angle and the water contact angle of our newly developed polymers were similar to the novolac. This resultindicated that the developed polymer showed similar hydrophilicity to the novolac with keeping higher O_2 etchingresistance than novolac.