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Magnetron with a sputtering unit for deposition of binary alloy films and solid solutions of two compounds

机译:具有溅射单元的磁控管,用于沉积二元合金薄膜和两种化合物的固溶体

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In this work, for the first time we present a magnetron with a sputtering unit used to deposit films of two metal alloys and binary solid solutions of simple compounds (oxides and nitrides). This unit contains two metal targets located on the same axis. The inner (cold) target is effectively cooled by running water, the outer (hot) target is cooled through the fastening elements and by radiation. The inner target is sputtered through slots in the outer target. Current voltage characteristics of a new magnetron working on direct current in inert and reactive environments have been studied. In pure argon with a low current, the V-I characteristics correspond to the mode of abnormal glow discharge, when the current increases, a maximum appears. In the reactive Ar + N2 environment, the V-I characteristics have a maximum and three sections corresponding to the nitride, transition and metal modes of operation of the sputtering unit.
机译:在这项工作中,我们首次介绍一种具有溅射单元的磁控管,用于沉积两种金属合金和简单化合物的二元固体溶液(氧化物和氮化物)的薄膜。该装置包含位于同一轴上的两个金属目标。内部(冷)靶通过自来水有效地冷却,外部(热)靶通过紧固元件和辐射冷却。内侧目标通过外目标中的槽溅射。研究了在惰性和反应环境中采用直流电的新磁控管的电流电压特性。在具有低电流的纯氩气中,V-I特性对应于异常辉光放电模式,当电流增加时,出现最大值。在反应AR + N2环境中,V-I特性具有与溅射单元的氮化物,过渡和金属操作模式对应的最大和三个部分。

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