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The effect of plasma instabilities on the background impurities in charge breeder ECRIS

机译:血浆稳定性对充电育种杂志背景杂质的影响

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Experimental observations of plasma instabilities in the 14.5 GHz PHOENIX charge breeder ECRIS are summarized. It has been found that the injection of ~(133)Cs~+ or ~(85)Rb~+ into oxygen discharge of the CB-ECRIS can trigger electron cyclotron instabilities, which results to sputtering of the surfaces exposed to the plasma, followed by up to an order of magnitude increase of impurity currents in the extracted n+ charge state distribution. The transition from stable to unstable plasma regime is caused by gradual accumulation and ionization of Cs/Rb altering the discharge parameters in 10 - 100 ms time scale, not by a prompt interaction between the incident ion beam and the ECRIS plasma. This time scale is similar to the reported breeding times of the high charge state Cs and Rb ions. Since the commonly applied method of measuring the breeding time, i.e. pulsing the 1+ injection, clearly affects the buffer gas discharge, it is argued that the actual breeding times in continuous operation can differ from those obtained by studying the injection transient.
机译:总结了14.5 GHz凤凰电荷育种ECRIS在血浆稳定性的实验观察。已经发现,将〜(133)Cs〜+或〜(85)Rb〜+注入Cb-Ecris的氧气排放可以触发电子回旋器稳定性,这导致暴露于等离子体的表面的溅射通过提取的n +充电状态分布中的杂质电流的幅度增加。从稳定到不稳定的等离子体制度的过渡是由Cs / Rb的逐渐积累和电离改变10-100 ms时间尺度的逐渐积累和电离引起的,而不是通过入射离子束和eCRIS等离子体之间的迅速相互作用。该时间尺度类似于报告的高电荷状态Cs和Rb离子的育种时间。由于测量育种时间的常用方法,即脉冲1+注射,清楚地影响缓冲气体放电,因此认为连续操作中的实际育种时间可以与通过研究注射瞬变而获得的育种时间。

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