Configuration for detecting plasma instability within a processing chamber of a plasma processing system [SOLUTION] substrate processing is provided. Disposed on a surface of the process chamber configured to measure the plasma process at least one parameter, the arrangement includes a probe configuration. The probe configuration, comprising a measuring capacitor and plasma-facing sensor, plasma-facing sensor is coupled to the first plate of the measuring capacitor. The probe configuration, detection arrangement is connected to the second plate of the measuring capacitor including. The detection structure is configured to convert a set of digital signals that are processed to detect plasma instability, the induced current through the measuring capacitor. [Selection] Figure Figure 1
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