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The Effect of Various ZnO Layer towards Sensing Performance as an Electrolyte-Insulator-Semiconductor pH Sensor

机译:各种ZnO层对电解质 - 绝缘体 - 半导体pH传感器感测性能的影响

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Multilayers zinc oxide thin films were synthesized by the sol-gel spin coating process to fabricate sensing membranes in an electrolyte-insulator-semiconductor (EIS) sensor for pH detection. The effect of various layers (single, three and five layers) on the crystallinity, morphological and optical properties of ZnO films were investigated by XRD, FE-SEM, and Photoluminescence respectively. The ZnO thin films grown were polycrystalline with hexagonal wurtzite structure. The films were not smooth, with grains and porosity in between them, and become denser as film thickness increased. The PL spectra exhibit two main emission peaks at near band edge 360-380 nm region (strong and sharp UV radiation) and 450-600 nm region (broad blue, green, and yellow radiation). Sensitivity, linearity was measured to determine the sensing and reliability performance of fabricated devices. The result confirmed that, the sensitivity for the three samples increased with increased layer from 48.3 mV/pH to 82.58 mV/pH. Compared to single and three layers of the ZnO electrolyte-insulator-semiconductor (EIS), ZnO grown with five layers exhibits a higher sensitivity of 82.58 mV/pH in solutions from pH 2-12 and linearity of 99.015 %. This is due to the increased of ZnO thickness, which produces dense surface and a well-crystallized grain structure.
机译:通过溶胶 - 凝胶旋涂工艺合成多层氧化锌薄膜,以制造电解质 - 绝缘体 - 半导体(EIS)传感器的感测膜,用于pH检测。通过XRD,Fe-SEM和光致发光研究了各种层(单三层和五层)对ZnO膜的结晶度,形态学和光学性质的影响。生长的ZnO薄膜是具有六边形紫硝基钛矿结构的多晶。薄膜不光滑,它们之间的晶粒和孔隙率,并且随着薄膜厚度的增加而变得更密集。 PL光谱在近带边缘360-380nm区域(强且尖锐的UV辐射)和450-600nm区域(宽蓝色,绿色和黄色辐射)上表现出两个主要发射峰。灵敏度,测量线性度以确定制造设备的感测和可靠性性能。结果证实,三个样品的敏感性随着48.3mV / pH的增加而增加,从48.3mV / pH值增加到82.58mV / pH值。与单层和三层的ZnO电解质 - 绝缘体 - 半导体(EIS)相比,用五层生长的ZnO在pH 2-12的溶液中表现出82.58mV / pH的浓度较高,线性度为99.015%。这是由于ZnO厚度的增加,它产生致密表面和良好结晶的晶粒结构。

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