Distributed electro-thermal model based on fast and scalable algorithm for GaN power devices and circuit simulations

摘要

In this work, we present a novel concept of electro-thermal modelling of GaN lateral power devices. Based on a distributed modelling approach, where a thermal model and electrical compact model are coupled, a new distributed electro-thermal model has been developed. The model provides a detailed insight in the distributed electro-thermal behaviour during steady-state and transient (power switching) regime with a significant reduction of computational time compared to alternative models existing in literature. The model has been validated with experiments where p-GaN devices are tested under standard switching conditions. The waveforms and temperature readings predicted by the model show an excellent agreement with the experiments.