The comparison of radiation hardness of heterojunction SiGe and conventional silicon bipolar transistors

摘要

The results of the X-ray radiation impact on heterojunction SiGe and conventional silicon bipolar transistors are presented. Oxide thickness over the emitter-base junction depletion region determines the radiation hardness of the bipolar transistors. In this article, the estimation of the rate of radiation degradation of electrical parameters for conventional silicon devices and SiGe-transistors is performed.