An Assessment of Chemical Vapor Deposition Synthesis of SnO_2 Nanowires by Statistical Design

摘要

This paper studies the chemical vapor deposition (CVD) synthesis conditions for tin oxide (SnO_2) nanowires (NWs) by using statistical design of experiment (DOE). The influences of synthesis parameters (growth temperature, deposition time and flow rate of argon) on SnO_2 NWs diameter were studied. From perturbation analysis with DOE, it was found that temperature gave the most significant effect to the diameter of SnO_2 NWs via CVD method followed by flowrate of argon and deposition time. Furthermore, based on the cube graph, the smallest SnO_2 NWs (~18 nm) can be obtained at temperature of 850°C with argon flow rate of 100 seem using a deposition time of 60 min. On the other hand, the largest SnO_2 NWs (-248 nm) can be produced at 900°C.