A PROCESS FOR PREPARING A ZINC OXIDE NANOWIRE BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND A NANOWIRE PREPARED THEREFROM

摘要

PURPOSE: Provided is a production method of high quality zinc oxide(ZnO)-based nanowires with controllable diameter, uniform thickness and no pollution by metal-organic chemical vapor deposition(MOCVD) without catalysts. Accordingly, the resultant nanowires have excellent electric and optical characteristics. CONSTITUTION: The zinc oxide(ZnO)-based nanowires are produced by the following steps of: putting Zn-contained organics such as dimethyl zinc, diethyl zinc, zinc acetate, etc., O-contained gases such as O2, O3, NO2, CO2 and vapor, and O-contained organics such as C4H8O into a vessel through separate lines; reacting between 200-1000deg.C under atmospheric pressure(760torr) and preferably 100torr for depositing ZnO-based nanowires on substrates such as semiconductors(Si, GaN, and AlN), single crystal oxides(glass, quartz, SiO2/Si, Al2O3 and MgO), and amorphous oxides. The resultant nanowires are less than 200nm in diameter and well aligned along the c-axis.