Ge/GaAs thin films for thermometer and bolometer application

摘要

We demonstrate that the heavily doped and completely compensated Ge thin films on semi-insulating GaAs substrates are very promising for bolometer and thermoresistor application in the 250 K to 500 K temperature range. These films have single-crystal structure, the pronounced nano-relief surface and compositional nano-inhomogeneities. The conductivity of such films is two-dimensional percolation of charge carriers through a fluctuating electrostatic potential.