Ge-on-GaAs film resistance thermometers for cryogenic applications

摘要

Our paper discusses and reviews the properties of a range of semiconductor sensors, which have been developed for thermometry in cryogenic applications. The range of sensors developed includes a family of single and dual element resistance thermometers based on Ge-on-GaAs films. The thin film devices were produced using standard semiconductor processing techniques and provide high device sensitivity within the range 0.03-500 K. The construction and characteristics of the sensors are presented together with a discussion of their sensitivities to magnetic fields and ionising radiation.