Synthesis, Characterization, and Spectroscopic Studies of Two-Dimensional Rare-Earth Oxychloride and InGaAs Thin Films.

摘要

The scaling down of device components to allow for increased transistor density is the mainstay for the integration of products with higher computing power compacted into smaller packages. The doubling of transistors that can be integrated into a square inch chip every year and a half, which has become industry's set target, has allowed for immense technological advances in consumer products. While this continuing feat has been mainly due to technological achievements that allow for the advancement in engineering smaller and smaller integrated circuits, it is imperative to explore the implementation of entirely new materials that will continue to improve on the efficacy of next generation of devices. The focus of this dissertation is primarily on the exploration of novel nano-materials and techniques that will allow for the facile integration of these nano-materials into devices for the next generation of display and optoelectronic components, and on developing a non-destructive high-throughput method of determining free electron density in chemically modified III-V semiconductors.