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5 GHz Low-Power RTD-Based Amplifier MMIC With a High Figure-Of-Merit of 24.5 dB/mW

机译：5 GHz低功耗RTD的放大器MMIC，具有24.5 dB / mW的高附件

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摘要

A low dc power RTD microwave amplifier utilizing a hybrid-coupled reflection-type topology is presented. The low-power microwave amplifier, which consists of a quadrature hybrid coupler and two RTDs, is implemented using an InP-based MMIC technology. The fabricated RTD amplifier shows low dc power consumption of 470 μW with high gain of 11.5 dB at 5 GHz, resulting in high FOM of 24.5 dB/mW. The amplifier IC is the first demonstration of a low-power microwave amplifier based on the RTD device technology.

机译：提出了利用混合耦合的反射型拓扑的低直流电源RTD微波放大器。使用基于INP的MMIC技术实现由正交混合耦合器和两个RTD组成的低功率微波放大器和两个RTD。制造的RTD放大器显示出470μW的低直流功耗为470μW，高增益为11.5 dB，5 GHz，产生高24.5 dB / mW。放大器IC是基于RTD器件技术的低功耗微波放大器的第一次演示。

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来源
《IPRM 2013》|2013年||共2页
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作者
Jongwon Lee; Jooseok Lee; Jaehong Park; Kyounghoon Yang;
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原文格式 PDF
正文语种
中图分类 TF843.1-532;
关键词
amplifier; InP; monolithic microwave integrated circuit; negative differential resistance; resonant tunneling diode;

机译：放大器;INP;单片微波集成电路;负差分电阻;谐振隧道二极管;

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5 GHz Low-Power RTD-Based Amplifier MMIC With a High Figure-Of-Merit of 24.5 dB/mW

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