AlGaInAs Selective Area Growth for high-speed EAM-based PIC Sources

摘要

We present a generic integration platform based on the SAG of AlGalnAs/InP MQW material. For efficient bandgap engineering of the different areas of the PICs, active and passive function heterostructures are precisely modeled and charac? terized in the SAG zones. This approach has allowed to design novel high-speed InP-based PIC.