Investigation on the MBE growth and properties of AlGaInAs/InP and InGaAs-InAlAs superlattices. Final report, April 15, 1986-December 14, 1989.

摘要

The results presented in this report cover work carried out under grant FG02-86ER45250 during the period May 15, 1986 to December 14, 1989. The focus of the work has been to grow wide-bandgap ternary and quaternary semiconductors InAlAs and InGaAlAs by molecular beam epitaxy and to investigate their electronic, optical and structural characteristics. The techniques being used are X-ray, TEM, photoluminescence and absorption, DLTS, Hall transport, and Raman Spectroscopy. The experiments have included both lattice matched and strained layers. We have grown a series of InGaAlAs quaternary alloys lattice matched to InP, covering the bandgap range from 0.75 to 1.45 eV. Low temperature photoluminescence measurements indicate that the layers are possibly the best even grown. The excitonic linewidths are extremely narrow and indicate minimal amounts of clustering. Detailed structural characterization of strained InGaAs/InAlAs on GaAs, by TEM has been done. The purpose of this study was two-fold: first, to understand the growth kinetics during strained epitaxy and the generation and propagation dislocations; and second, to study the growth of this mismatched layers for device applications. (ERA citation 15:035056)